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Proceedings Paper

GaAs array fabrication
Author(s): D. H. Lumb; M. Bavdaz; D. Martin; A. Owens; A. Peacock; S. Nenonen; H. Andersson
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Paper Abstract

The fabrication of GaAs diode arrays for X-ray imaging spectroscopy applications is described. Special attention is paid to the processing of wafers and devices to allow integration with different readout Application Specific Integrated Circuits (ASICs) using flip-chip bump bonding techniques.

Paper Details

Date Published: 15 June 2006
PDF: 9 pages
Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 627614 (15 June 2006); doi: 10.1117/12.671509
Show Author Affiliations
D. H. Lumb, European Space Agency, ESTEC (Netherlands)
M. Bavdaz, European Space Agency, ESTEC (Netherlands)
D. Martin, European Space Agency, ESTEC (Netherlands)
A. Owens, European Space Agency, ESTEC (Netherlands)
A. Peacock, European Space Agency, ESTEC (Netherlands)
S. Nenonen, Oxford Instruments Analytical OY (Finland)
H. Andersson, Oxford Instruments Analytical OY (Finland)


Published in SPIE Proceedings Vol. 6276:
High Energy, Optical, and Infrared Detectors for Astronomy II
David A. Dorn; Andrew D. Holland, Editor(s)

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