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Proceedings Paper

S-Ku band intelligent amplifier microsystem
Author(s): Katherine J. Herrick; George Jerinic; Robert P. Molfino; Steven M. Lardizabal; Brandon Pillans
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Paper Abstract

Progress-to-date of a S-Ku band intelligent amplifier microsystem is presented. Performance objectives are 0.5 Watt with 30%-55% power added efficiency across the band using a total of 10 RF MEMS. GaAs-to-GaAs and Borosilicate-to-GaAs low temperature (<250C) indium-gold wafer bonding is employed to provide hermeticity and integration of the pHEMT transistor with the RF MEMS. The compact mixed signal microsystem, 2 inches by 3 inches, utilizes an existing data processor with an intelligent control algorithm which optimizes the input and output circuit matching networks for optimal performance.

Paper Details

Date Published: 18 May 2006
PDF: 11 pages
Proc. SPIE 6232, Intelligent Integrated Microsystems, 62320W (18 May 2006); doi: 10.1117/12.669718
Show Author Affiliations
Katherine J. Herrick, Raytheon Co. (United States)
George Jerinic, Raytheon Co. (United States)
Robert P. Molfino, Raytheon Co. (United States)
Steven M. Lardizabal, Raytheon Co. (United States)
Brandon Pillans, Raytheon Co. (United States)

Published in SPIE Proceedings Vol. 6232:
Intelligent Integrated Microsystems
Ravindra A. Athale; John C. Zolper, Editor(s)

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