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Proceedings Paper

Laser annealing of implanted silicon carbide and Raman characterization
Author(s): I. Zergioti; A. G. Kontos; K. Zekentes; C. Boutopoulos; P. Terzis; Y. S. Raptis
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Paper Abstract

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the second (532nm) and third (355nm) harmonic of a Nd:YAG laser at 4ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Restsrahlen band.

Paper Details

Date Published: 7 June 2006
PDF: 8 pages
Proc. SPIE 6261, High-Power Laser Ablation VI, 626135 (7 June 2006); doi: 10.1117/12.669497
Show Author Affiliations
I. Zergioti, National Technical Univ. of Athens (Greece)
A. G. Kontos, National Technical Univ. of Athens (Greece)
K. Zekentes, Foundation for Research and Technology-Hellas (Greece)
C. Boutopoulos, National Technical Univ. of Athens (Greece)
P. Terzis, National Technical Univ. of Athens (Greece)
Foundation for Research and Technology-Hellas (Greece)
Y. S. Raptis, National Technical Univ. of Athens (Greece)


Published in SPIE Proceedings Vol. 6261:
High-Power Laser Ablation VI
Claude R. Phipps, Editor(s)

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