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Proceedings Paper

Simulation of fast laser-induced melting and solidification in Si and GaAs
Author(s): Elena I. Gatskevich; Gennadii D. Ivlev; Petr Přikryl
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Paper Abstract

Crystal-liquid phase transitions induced in monocrystalline Si and GaAs surface layers by nanosecond ruby laser irradiation have been studied. The values of undercooling at crystallization stage were calculated on the basis of a nonequilibrium model of the phase transitions. The calculated values of undercooling are compared with experimental results obtained by a pyrometric method under irradiation of samples with (111) and (100) surface crystallography orientations. Calculated values of surface temperature at crystallization stage are in a reasonable agreement with experimental data. The revealed experimentally difference in melt undercooling at crystallization stage for (100) and (111) surface orientations is explained within the framework of the nonequilibrium model.

Paper Details

Date Published: 7 June 2006
PDF: 7 pages
Proc. SPIE 6261, High-Power Laser Ablation VI, 62610G (7 June 2006); doi: 10.1117/12.669469
Show Author Affiliations
Elena I. Gatskevich, Institute of Electronics (Belarus)
Gennadii D. Ivlev, Institute of Electronics (Belarus)
Petr Přikryl, Mathematical Institute (Czech Republic)


Published in SPIE Proceedings Vol. 6261:
High-Power Laser Ablation VI
Claude R. Phipps, Editor(s)

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