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Proceedings Paper

3-D integration of nanophotonics with CMOS electronics
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Paper Abstract

A novel approach to three-dimensionally (3-D) integrate nanophotonic and electronic devices in silicon is described. The method is based on the SIMOX (Separation by Implantation of OXygen) process, to realize three-dimensionally (3-D) integrated devices in a monolithic fashion. In this approach, photonic and electronic devices are realized on vertically stacked layers of silicon, separated from each other by a dielectric layer of silicon dioxide formed through the process of oxygen implantation. Opto-electronic integration is demonstrated by realizing photonic circuits in a subterranean silicon layer and Metal-Oxide-Semiconductor (MOS) transistors on a surface layer of silicon. Optical and electronic functionalities are thus separated into two different layers of silicon, paving the way towards dense three-dimensional opto-electronic integration. This has the significant advantage that photonic devices do not consume any of the expensive silicon real estate required for CMOS circuitry. The versatility of the technique of SIMOX 3-D sculpting in obtaining complex optical circuitry is also demonstrated by synthesizing a cascaded microdisk structure that may be utilized to tailor the passband characteristics of optical filters.

Paper Details

Date Published: 20 April 2006
PDF: 7 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 618314 (20 April 2006); doi: 10.1117/12.669074
Show Author Affiliations
Bahram Jalali, Univ. of California/Los Angeles (United States)
Tejaswi Indukuri, Univ. of California/Los Angeles (United States)
Prakash Koonath, Univ. of California/Los Angeles (United States)
Koichiro Kishima, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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