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Proceedings Paper

Nonlinear effects in ultrasmall silicon-on-insulator ring resonators
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Paper Abstract

We investigate the significance of secondary effects caused by free carrier accumulation and subsequent heating on the nonlinear behaviour of ultrasmall Silicon-On-Insulator ring resonators. All-optical bistability based on thermal dispersion was experimentally obtained for an input power of only 0.28mW. At higher powers, pulsating behaviour was observed which is problematic for the stability of thermal memory and switching operations. Using free carrier dispersion, we also demonstrate all-optical wavelength conversion with a pulse length of 10 ns, indicating that bitrates of 0.1 Gb/s are feasible. Also here, the presence of unstable pulsations was observed, leading to significant errors in the converted data pattern.

Paper Details

Date Published: 20 April 2006
PDF: 8 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831A (20 April 2006); doi: 10.1117/12.668249
Show Author Affiliations
Gino Priem, Ghent Univ (Belgium)
Pieter Dumon, Ghent Univ (Belgium)
Wim Bogaerts, Ghent Univ (Belgium)
Dries Van Thourhout, Ghent Univ (Belgium)
Geert Morthier, Ghent Univ (Belgium)
Roel Baets, Ghent Univ (Belgium)


Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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