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Proceedings Paper

3D photoresist etching simulation using cellular automata
Author(s): Zai-Fa Zhou; Qing-An Huang; Wei-Huan Li; Fei-Peng Da; Hai-Pin Shen
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Paper Abstract

The two-dimensional (2-D) dynamic cellular automata (CA) model, for the first time, has been successfully extended in three dimensions for the 3-D simulation of photoresist etching process. The 3-D photoresist etching process has been successfully simulated using the 3-D dynamic CA model when some well-known photoresist etch rate distribution functions are adopted. Simulation results indicate that the 3-D dynamic CA model is fast, accurate and stable. This is identified to be critical useful to the device-sized 3-D lithography process simulation of integrated circuits (IC) and Microelectromechanical System (MEMS).

Paper Details

Date Published: 1 February 2006
PDF: 7 pages
Proc. SPIE 6034, ICO20: Optical Design and Fabrication, 60340Q (1 February 2006); doi: 10.1117/12.668110
Show Author Affiliations
Zai-Fa Zhou, Southeast Univ. (China)
Qing-An Huang, Southeast Univ. (China)
Wei-Huan Li, Southeast Univ. (China)
Fei-Peng Da, Southeast Univ. (China)
Hai-Pin Shen, Southeast Univ. (China)


Published in SPIE Proceedings Vol. 6034:
ICO20: Optical Design and Fabrication
James Breckinridge; Yongtian Wang, Editor(s)

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