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Proceedings Paper

An ICP etch model based on time multiplexed deep etching
Author(s): Jian Zhang; Qing-An Huang; Wei-Hua Li
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Paper Abstract

A novel ICP etch model based on time multiplexed deep etching is reported in this paper. 2-D and 3-D zonal simulations of surface evolvement can be performed using this model. The simulation is advanced with the simplex algorithm for surface evolvement and consequent higher efficiency than other reported hybrid algorithms. And the etching of different material types can also be simulated using this model. Simulations with different aspect ratios are performed in this paper and the results are quite perfect without aforehand experimental fitting.

Paper Details

Date Published: 7 February 2006
PDF: 8 pages
Proc. SPIE 6032, ICO20: MEMS, MOEMS, and NEMS, 60320G (7 February 2006); doi: 10.1117/12.667865
Show Author Affiliations
Jian Zhang, Southeast Univ. (China)
Qing-An Huang, Southeast Univ. (China)
Wei-Hua Li, Southeast Univ. (China)

Published in SPIE Proceedings Vol. 6032:
Masayoshi Esashi; Zhaoying Zhou, Editor(s)

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