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Proceedings Paper

High quality InAs0.04Sb0.96/GaAs single crystals with a cutoff wavelength of 12 μm grown by melt epitaxy
Author(s): Yu Zhu Gao; Xiu Ying Gong; Yong Hai Chen; Tomuo Yamaguchi
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Paper Abstract

The InAs0.04Sb0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared (FTIR) transmission spectra reveal a strongly band gap narrowing for this alloy. A room-temperature band gap of 0.1055 eV is demonstrated via analyzing the temperature dependence of the carrier density for the InAs0.04Sb0.96 layers, which is in good agreement with the value obtained by transmittance measurements. The temperature dependence of energy band gap for InAs0.04Sb0.96/GaAs is studied between 12 K and 300 K by measuring the absorption spectra. An electron mobility of 44,700 cm2/Vs with a carrier density of 8.77 × 1015 cm-3 at 300 K, an electron mobility of 21,500 cm2/Vs with a carrier density of 1.57 × 1015 cm-3 at 77 K, and a peak electron mobility of 48,000 cm2/Vs at 245 K have been achieved for a 100 μm thick epilayer. These results indicate its potential applications for infrared photodetectors and high-speed electron devices.

Paper Details

Date Published: 23 January 2006
PDF: 7 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60291I (23 January 2006); doi: 10.1117/12.667763
Show Author Affiliations
Yu Zhu Gao, Tongji Univ. (China)
Xiu Ying Gong, Tongji Univ. (China)
Yong Hai Chen, Institute of Semiconductors (China)
Tomuo Yamaguchi, Shizuoka Univ. (Japan)

Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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