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Proceedings Paper

Mercury indium telluride – a new promising material for photonic structures and devices
Author(s): Zinaida M. Grushka; Peter N. Gorley; Olena G. Grushka; Paul P. Horley; Yarema I. Radevych; Zhuang Zhuo
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Paper Abstract

Hg3In2Te6 material belongs to defect semiconductor group with concentration of stoichiometric vacancies up to 1021cm-3, determining its unusual physical properties. In this paper we present the results proving the possibility to use this material for several types of high-efficient photonic structures, including self-calibrating photodiodes, high-speed photodiodes, multielement photodiodes with improved sensitivity and optical filters for spectral ranges 2-28μm. Performed photoconductivity measurements confirmed high photosensitivity of the material in wide spectral ranges of λ=0.35-1.85 μm, covering spectral sensitivity areas of CdS, CdSe, GaAs, Si and Ge. In comparison with these semiconductors, Hg3In2Te6 has the lowest melting point (983K) making it possible to decrease energy consumption necessary for its synthesis. The experimental results also prove high quantum efficiency of the photoconductivity of Hg3In2Te6 for hν = 0.74 - 3.5 eV. Mercury indium telluride is an ideal material for surface-barrier structures and hetero-junctions, due to low density of surface states and insensitivity to absorption of atmospheric oxygen.

Paper Details

Date Published: 23 January 2006
PDF: 9 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60291A (23 January 2006); doi: 10.1117/12.667749
Show Author Affiliations
Zinaida M. Grushka, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Peter N. Gorley, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Olena G. Grushka, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Paul P. Horley, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Yarema I. Radevych, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Zhuang Zhuo, Coretech Crystal Company (China)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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