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Proceedings Paper

Double frequency absorption induced by Al-Si Schottky barrier potential and mechanism of two-photon response
Author(s): Xiaoting Zhang; Yanjun Gao; Zhanguo Chen; Gang Jia; Yunlong Liu; Xiuhuan Liu; Yuhong Zh
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Paper Abstract

By observing two-photon response and anisotropy of the light-induced voltage in Si-Al Schottky barrier potential of the Si MSM (Metal-Semiconductor-Metal) planar structure two-photon response optical detector. It is certified from the experimental and theoretical analysis that the built-in electric field generated by the Schottky barrier potential will induce the phenomena of optical rectification in Si photodiode. Thus, it is deduced that there must be double-frequency absorption (DFA) caused by phase-mismatch in the mechanism of two-photon response of Si photodiode. If the intensity of the built-in electric field is strong enough, the DFA will be the main feature of the two-photon response.

Paper Details

Date Published: 23 January 2006
PDF: 6 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602917 (23 January 2006); doi: 10.1117/12.667740
Show Author Affiliations
Xiaoting Zhang, Jilin Univ. (China)
Yanjun Gao, Jilin Univ. (China)
Zhanguo Chen, Jilin Univ. (China)
Gang Jia, Jilin Univ. (China)
Yunlong Liu, Jilin Univ. (China)
Xiuhuan Liu, Jilin Univ. (China)
Yuhong Zh, Jilin Univ. (China)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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