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Proceedings Paper

Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD
Author(s): Jingwei Wang; Yiding Wang; Tao Wang; Shuren Yang; Xiaoting Li; Jingzhi Yin; Xiaofeng Sai; Hongkai Gao
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Paper Abstract

Epitaxial layers and monolayer of Ga0.98 In0.02As0.24Sb0.76 quaternary alloys lattice matched to GaSb substrates were grown by our home-made low pressure metal organic chemical vapor deposition (LP-MOCVD). Lattice mis-match (Δa/a~2.5%) between Ga0.98In0.02As0.24Sb0.76 quaternary alloys and GaSb substrate was obtained. Mirrorlike surface morphologies were investigated by SEM and AFM. Undoped Ga0.98In0.02As0.24Sb0.76 epitaxial layers grown on semi-insulated GaAs substrates indicates n-type with carrier density of 1.8×1017cm-3 and electron mobility of 2551 cm2v-1 s-1. Growth at this temperature yielded a root-mean-square (rms) surface roughness of 160 nm. The effects of growth parameters on epitaxial layers were discussed. It is shown that under proper growth conditions, containing growth temperature (570~620°C), V/III ratios (2~6) and flux of carrier gas, smooth and high quality Ga0.98In0.02As0.24Sb0.76 epitaxial layers can be achieved.

Paper Details

Date Published: 14 February 2006
PDF: 6 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602912 (14 February 2006); doi: 10.1117/12.667720
Show Author Affiliations
Jingwei Wang, Xi'an Institute of Optical and Precision Mechanics (China)
Yiding Wang, Jilin Univ. (China)
Tao Wang, Xi'an Institute of Optical and Precision Mechanics (China)
Shuren Yang, Jilin Univ. (China)
Xiaoting Li, Chang'an Univ. (China)
Jingzhi Yin, Jilin Univ. (China)
Xiaofeng Sai, Xi'an Institute of Optical and Precision Mechanics (China)
Hongkai Gao, Xi'an Institute of Optical and Precision Mechanics (China)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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