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Proceedings Paper

Substrate bias effect on preparation of nanocrystalline silicon carbide thin films in helicon wave plasma chemical vapor deposition
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Paper Abstract

Silicon carbide thin films are prepared by helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) using a gas mixture of silane, methane, and hydrogen at a constant gas flow ratio under varying negative DC bias voltage. The structural and optical properties of the deposited films are investigated using Fourier transform infrared spectra (FTIR), ultraviolet-visible (UV-VIS) transmission spectra, and scanning electron microscopy (SEM). It is found that by applying the moderate bias on the substrates to accelerate the energetic ions, nanocrystalline silicon carbide can be deposited at lower onset temperature than without bias, and the crystalline grain size of the films is smaller and more uniform. The mechanism about the enhancing effect of the bias is discussed on the performance of positive ions in the plasma.

Paper Details

Date Published: 23 January 2006
PDF: 6 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290Y (23 January 2006); doi: 10.1117/12.667714
Show Author Affiliations
Wei Yu, Hebei Univ. (China)
Wanbing Lu, Hebei Univ. (China)
Chunsheng Wang, Hebei Univ. (China)
Wenge Ding, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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