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Proceedings Paper

Investigation of InP epitaxial films on GaAs substrate grown by LP-MOCVD
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Paper Abstract

The paper reports that InP epitaxial layers were grown on iron doped semi-insulating GaAs substrate by low-pressure metalorganic chemical vapor decomposition (LP-MOCVD). Prior to the growth of InP, amorphous InP buffer layer was grown at 400°C, then the substrate zone temperature was raised to the normal InP growth temperature and InP epitaxial layer was grown at 665°C. The obtained InP layers have been characterized by transmission electron microscope, optical microscope, X-ray diffraction, photoluminescence measurement.

Paper Details

Date Published: 23 January 2006
PDF: 6 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290T (23 January 2006); doi: 10.1117/12.667709
Show Author Affiliations
Aiguang Ren, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Bin Chen, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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