Share Email Print

Proceedings Paper

The improvement of thick oxidized porous silicon layer growth process
Author(s): Jian Li; Junming An; Hongjie Wang; Junlei Xia; Dingshan Gao; Xiongwei Hu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Oxidizing thick porous silicon layer into silicon dioxide is a timesaving and low-cost process for producing thick silicon dioxide layer used in silicon-based optical waveguide devices. The solution of H2O2 is proposed to post-treat thick porous silicon (PS) films. The prepared PS layer as the cathode is applied about 10mA/cm2 current in mixture of ethanol, HF, and H2O2 solutions, in order to improve the stability and the smoothness of the surface. With the low-temperature dry-O2 pre-oxidizations and high-temperature wet O2 oxidizations process, a high-quality SiO2 30 μm thickness layer that fit for the optical waveguide device was prepared. The SEM images show significant improved smoothness on the surface of oxidized PS thick films, the SiO2 film has a stable and uniformity reflex index that measured by the prism coupler, the uniformity of the reflex index in different place of the wafer is about 0.0003.

Paper Details

Date Published: 23 January 2006
PDF: 4 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290S (23 January 2006); doi: 10.1117/12.667708
Show Author Affiliations
Jian Li, Institute of Semiconductors (China)
Junming An, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Junlei Xia, Institute of Semiconductors (China)
Dingshan Gao, Institute of Semiconductors (China)
Xiongwei Hu, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

© SPIE. Terms of Use
Back to Top