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Proceedings Paper

Resonant Raman technique: a powerful tool for exploring electron-phonon coupling in Se nanoclusters
Author(s): Irene Ling Li; Jian Pang Zhai; Zi Kang Tang; Shuang Chen Ruan; Min Zhang
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Paper Abstract

Raman scattering is an inelastic process, in which we can obtain information about material lattice vibration frequencies. If the wavelength of the excitation laser is within the electronic spectrum of the material, the intensity of some Raman-active vibrations will increase enormously. This resonant Raman effect can be quite useful to explore the electron-phonon coupling in the substance. In this article, we report the investigations on the electron-phonon coupling effect in Se nanoclusters using resonant Raman technique. Up to 10 different laser lines are used in the experiment. The Raman intensity strongly depends on the energy of the laser lines used for excitation. The one-phonon symmetric A1 modes for Se single helix and Se8 rings are enhanced in the vicinity of their absorption bands. Detailed analysis shows that the Raman intensity in the high frequency range 450 - 550 cm-1 is a sum of individual second-order Raman scattering intensities for the confined Se species. These two-phonon Raman shifts occur at twice the frequency shift of the first-order Raman lines, and their intensities are also enhanced when the excitation laser energy matches an electronic transition in Se nanoclusters.

Paper Details

Date Published: 23 January 2006
PDF: 6 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290N (23 January 2006); doi: 10.1117/12.667691
Show Author Affiliations
Irene Ling Li, Shenzhen Univ. (China)
Jian Pang Zhai, Hong Kong Univ. of Science and Technology (Hong Kong China)
Zi Kang Tang, Hong Kong Univ. of Science and Technology (Hong Kong China)
Shuang Chen Ruan, Shenzhen Univ. (China)
Min Zhang, Shenzhen Univ. (China)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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