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Proceedings Paper

Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD
Author(s): Wenjuan Shen; Yao Duan; Jun Wang; Qiyuan Wang; Yiping Zeng
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Paper Abstract

High quality ZnO films have been successfully grown on Si(100) substrates by Metal-organic chemical vapor deposition (MOCVD) technique. The optimization of growth conditions (II-VI ratio, growth temperature, etc) and the effects of film thickness and thermal treatment on ZnO films' crystal quality, surface morphology and optical properties were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) spectrum, respectively. The XRD patterns of the films grown at the optimized temperature (300°C) show only a sharp peak at about 34.4° corresponding to the (0002) peak of hexagonal ZnO, and the FWHM was lower than 0.4°. We find that under the optimized growth conditions, the increase of the ZnO films' thickness cannot improve their structural and optical properties. We suggest that if the film's thickness exceeds an optimum value, the crystal quality will be degraded due to the large differences of lattice constant and thermal expansion coefficient between Si and ZnO. In PL analysis, samples all displayed only ultraviolet emission peaks and no observable deep-level emission, which indicated high-quality ZnO films obtained. Thermal treatments were performed in oxygen and nitrogen atmosphere, respectively. Through the analysis of PL spectra, we found that ZnO films annealing in oxygen have the strongest intensity and the low FWHM of 10.44nm(106 meV) which is smaller than other reported values on ZnO films grown by MOCVD.

Paper Details

Date Published: 23 January 2006
PDF: 8 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290G (23 January 2006); doi: 10.1117/12.667680
Show Author Affiliations
Wenjuan Shen, Institute of Semiconductors (China)
Yao Duan, Institute of Semiconductors (China)
Jun Wang, Institute of Semiconductors (China)
Qiyuan Wang, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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