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Proceedings Paper

THz quantum semiconductor devices
Author(s): H.C. Liu; H. Luo; D. Ban; M. Wächter; C. Y. Song; Z. R. Wasilewski; M. Buchanan; G. C. Aers; A. J. SpringThorpe; J. C. Cao; S. L. Feng; B. S. Williams; Q. Hu
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Paper Abstract

Terahertz (1 - 10 THz) quantum-well photodetectors and quantum- cascade lasers have been investigated. The design and projected detector performance are presented together with experimental results on several test devices, all working at photon energies below the optical phonons. Background limited infrared performance (BLIP) operations were observed for all samples (three in total) designed for different wavelengths. For lasers, a set of THz quantumcascade lasers with identical device parameters except for the doping concentration has been studied. The δ-doping density for each period was varied from 3.2 × 1010 to 4.8 × 1010 cm-2. We observed that the lasing threshold current increased monotonically with doping. Moreover, the measured results on devices with different cavity lengths provided evidence that the free carrier absorption caused waveguide loss also increased monotonically. Interestingly however, the observed maximum lasing temperature displayed an optimum at a doping density of 3.6 × 1010 cm-2.

Paper Details

Date Published: 23 January 2006
PDF: 10 pages
Proc. SPIE 6029, ICO20: Materials and Nanostructures, 602901 (23 January 2006); doi: 10.1117/12.667658
Show Author Affiliations
H.C. Liu, National Research Council (Canada)
H. Luo, National Research Council (Canada)
D. Ban, National Research Council (Canada)
M. Wächter, National Research Council (Canada)
C. Y. Song, National Research Council (Canada)
Z. R. Wasilewski, National Research Council (Canada)
M. Buchanan, National Research Council (Canada)
G. C. Aers, National Research Council (Canada)
A. J. SpringThorpe, National Research Council (Canada)
J. C. Cao, Shanghai Institute of Microsystem and Information Technology (China)
S. L. Feng, Shanghai Institute of Microsystem and Information Technology (China)
B. S. Williams, Massachusetts Institute of Technology (United States)
Q. Hu, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6029:
ICO20: Materials and Nanostructures
Wei Lu; Jeff Young, Editor(s)

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