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Proceedings Paper

Study on LD-pumped Nd:YAG laser cutter
Author(s): Jianfeng Cui; Jing Zhao; Zhongwei Fan; Cunhua Zhao; Yong Bi; Jing Zhang; Gang Niu; Zhaohui Shi; Bo Pei; Guoxin Zhang; Yan Xue; Yan Qi
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Paper Abstract

The theory of laser cutter and the technology neck is analyzed. We can conclude that it is almost impossible to deal with the waste thick silicon wafers which are yielded in producing silicon wafers by conventional eroding or diamond cutting, while it is also unperfected with ecumenical laser cutter without good beam quality or precise laser and optics system. It is represented that high average power and high repetition rate laser with good beam quality and precise laser and optics system are pivotal to obtain excellent cutting effect such as thick groove depth, rapid cutting speed, fine kerf section without considering the effect of technique. Considering laser medium thermal lens effect and thermal focal length changing with pumping power, using plano-convex high reflectivity mirror as the back cavity mirror to compensate the heat lens influence, aλ/4 waveplate to compensate heat-induced birefraction, utilize the Nd:YAG self-aperture effect, more than 50 W average power 1.064 um IR output is obtained with beam quality factor (M2) equals 3.19. Through the LD-Pumped Nd:YAG laser cutter we developed with short focus length negative spherical aberration focusing lens, double axis linear step motor positioning system, suitable beam expander multiplying factor, appropriate diameter of exit beam aperture, proper repetition rate, when the cutting velocity equals 400mm/min, 0.75mm thick silicon wafer can be penetrated; when the cutting velocity equals 100mm/min, double-layer 0.75mm thick silicon wafer can be penetrated. The cross section is fine and the groove is narrow, the cutting quality meets the expecting demand.

Paper Details

Date Published: 16 January 2006
PDF: 14 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60282F (16 January 2006); doi: 10.1117/12.667348
Show Author Affiliations
Jianfeng Cui, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Beijing GK Laser Technology Co., Ltd. (China)
Jing Zhao, Grimm Semiconductor Materials Co., Ltd. (China)
Zhongwei Fan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Beijing GK Laser Technology Co. Ltd. (China)
Academy of Opto-electronics (China)
Cunhua Zhao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Beijing GK Laser Technology Co., Ltd. (China)
Yong Bi, Academy of Opto-electronics (China)
Jing Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Beijing GK Laser Technology Co., Ltd. (China)
Gang Niu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Beijing GK Laser Technology Co., Ltd. (China)
Zhaohui Shi, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Beijing GK Laser Technology Co., Ltd. (China)
Bo Pei, Beijing GK Laser Technology Co., Ltd. (China)
Academy of Opto-electronics (China)
Guoxin Zhang, Beijing GK Laser Technology Co., Ltd. (China)
Yan Xue, Beijing GK Laser Technology Co., Ltd. (China)
Yan Qi, Academy of Opto-electronics (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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