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Proceedings Paper

High-power InGaAs/GaAs VCSEL's two-dimension arrays
Author(s): Li Te; Yongqiang Ning; Yanfang Sun; Zhenhua Jin; Liu Yun; Li-jun Wang
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Paper Abstract

Selectively oxidized InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in 1KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm, the full width at half-maximum is 0.7 nm, and the far-field divergence angle is about 17o.The characteristics of a single device with a active region diameter of 800μm is compared with that of a 2-D array with active region diameter of individual element of 200μm. These two kinds of devices have the same total lasing area. At the same current injection, the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.

Paper Details

Date Published: 23 December 2005
PDF: 6 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 602816 (23 December 2005); doi: 10.1117/12.667173
Show Author Affiliations
Li Te, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Yongqiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yanfang Sun, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Zhenhua Jin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Liu Yun, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li-jun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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