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Proceedings Paper

Theoretical analysis of 980nm high power vertical external-cavity surface-emitting semiconductor laser (VECSEL)
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Paper Abstract

By using bottom-emitting structure, we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well, single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron, heavy and light holes. According to the transition selection rule, we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells, we calculated the gain of VECSEL using transition matrix elements of electron, heavy and light holes. We give out the threshold gain, output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror, active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.

Paper Details

Date Published: 29 December 2005
PDF: 10 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280X (29 December 2005); doi: 10.1117/12.667161
Show Author Affiliations
Chun-feng He, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Guo-guang Lu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Xiao-nan Shan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Yan-fang Sun, ChangChun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Te Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Li Qin, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chang-ling Yan, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changchun Univ. of Science and Technology (China)
Yong-qiang Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Li-jun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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