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Proceedings Paper

980 nm QCW high power semiconductor lasers array
Author(s): Xin Gao; Baoxue Bo; Yi Qu
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Paper Abstract

High power laser bars become more and more important for pumping of solid-state lasers, medical applications, optical data storage, display, and material processing such as welding, cutting, or surface treatment. Diode lasers array emitting at 980 nm has excited considerable interest as optical pumping source for the Erbium-doped fiber amplifier (EDFA), cladding pumped fiber amplifiers or fiber lasers. A high power multi-mode 980 nm InGaAs laser arrays grown by MBE are reported. Non-absorbing windows are integrated at the ends of the cavity to decrease the light density on the mirror for high power operation. A QCW output power of 64.8 W for lasers array with coated facets is achieved. The threshold current is 7.5 A. The lasing spectrum is peaked at 978 nm with a FWHM of 2.5 nm.

Paper Details

Date Published: 24 December 2005
PDF: 6 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280W (24 December 2005); doi: 10.1117/12.667160
Show Author Affiliations
Xin Gao, Changchun Univ. of Science and Technology (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)
Yi Qu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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