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Proceedings Paper

A novel structure for high peak power semiconductor lasers
Author(s): Baoxue Bo; Xin Gao; Yi Qu; Xiuhua Fu; Jing Zhang; Hui Li; Peng Lu
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Paper Abstract

A novel structure for high peak power output of semiconductor lasers has been designed with a weak optical absorption region near cavity facet and a low optical energy density distribution on both front and back cavity facets has been realized simultaneously. The device has been fabricated with a standard MBE grown AlGaAs/GaAs material wafer, and a stack assembly of five laser chips has been finally obtained. The measured stack has a maximum peak power output of 300W with a whole emitting aperture of 2×0.5mm2 and a satisfactory farfield (θ⊥) output property is also achieved with θ⊥ of 31o.

Paper Details

Date Published: 23 December 2005
PDF: 6 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280U (23 December 2005); doi: 10.1117/12.667155
Show Author Affiliations
Baoxue Bo, Changchun Univ. of Science and Technology (China)
Xin Gao, Changchun Univ. of Science and Technology (China)
Yi Qu, Changchun Univ. of Science and Technology (China)
Xiuhua Fu, Changchun Univ. of Science and Technology (China)
Jing Zhang, Changchun Univ. of Science and Technology (China)
Hui Li, Changchun Univ. of Science and Technology (China)
Peng Lu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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