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Proceedings Paper

Energy transfer upconversion in Er3+-doped and Er3+, Ho3+ -codoped Cs2NaGdC16 crystals
Author(s): Dianyuan Wang; Jianglong Luo; Jianqing Liu; Lisheng Yu; Aoqiu Yu; Yanyan Guo; Min Yin
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Paper Abstract

Powder samples Cs2NaGdCl6:10%Er3+ and Cs2NaGdCl6:10%Er3+,20%Ho3+ investigated were prepared. Upconversion and down-conversion spectra from both Er3+ and Ho3+ ions was measured and investigated at room temperature under excitation into the 2H11/2 levels of Er3+ ions by using a 514.5 nm Ar+ laser. The observed emissions were all clearly assigned and analyzed according to the energy level diagrams of Ho3+ and Er3+ ions. It was concluded that many emissions with peaks at 423 nm (5G5 -> 5I8), 492 nm (5F3 -> 5I8), 587 nm (5G4 -> 5I6), 657 nm (5F5 -> 5I8) and 760 nm (5I4 -> 5I8) were all from Ho3+ ions, although Ho3+ ions cannot be excited by a ground-state-absorption (GSA). Therefore, all the emissions from Ho3+ ions were caused by multistep energy transfer from Er3+ to Ho3+ ions. And the 388 nm and 410 nm upconversion emissions were assigned to be 4G11/2->4I15/2 and 2H9/2->4I15/2 transitions of Er3+ ions, respectively. The possible upconversion mechanism for them was deduced to be excitation state absorption (ESA) and energy transfer (ET). In addition, the result that the slopes of 388nm and 410nm upconversion emissions of Er3+ ions were smaller in Er3+-doped than Er3+, Ho3+-codoped Cs2NaGdCl6 crystals was explained successfully.

Paper Details

Date Published: 23 December 2005
PDF: 5 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280S (23 December 2005); doi: 10.1117/12.667151
Show Author Affiliations
Dianyuan Wang, Jiujiang Univ. (China)
Jianglong Luo, Jiujiang Univ. (China)
Jianqing Liu, Jiujiang Univ. (China)
Lisheng Yu, Jiujiang Univ. (China)
Aoqiu Yu, Jiujiang Univ. (China)
Yanyan Guo, Jiujiang Univ. (China)
Min Yin, Univ. of Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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