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Proceedings Paper

High power output and temperature characteristics of 1.06μm diode array module
Author(s): Shun Yao; Getao Tao; Guoguang Lu; Yun Liu; Biao Zhang; Di Yao; Lijun Wang
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Paper Abstract

In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% are processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20oC to 40o C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20o C. The central wavelength is 1059.4nm.

Paper Details

Date Published: 21 December 2005
PDF: 6 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280G (21 December 2005); doi: 10.1117/12.667132
Show Author Affiliations
Shun Yao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Getao Tao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Guoguang Lu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chinese Academy of Sciences (China)
Yun Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Biao Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Di Yao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Lijun Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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