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Proceedings Paper

Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2μm
Author(s): C. J. Panchal; V. A. Kheraj; K. M. Patel; P. K. Patel; B. M. Arora; T. K. Sharma
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Paper Abstract

The power enhancement of laser diodes is achieved by single and multilayer facet coatings such as antireflection and high reflection respectively at the front facet and the back facet of the laser diode. In this work, we have experimented with single layer λ/4 thick Al2O3 film for the Anti Reflection (AR) coating and stack of λ/4 thick Al2O3/ λ/4 thick Si bi-layers for the High Reflection (HR) coating. The AR/HR coatings were deposited in an electron beam evaporation system. The effect of front and back facet reflectivities on the output power of diode laser has been studied. The highly strained MOVPE grown InGaAs quantum-well edge emitting broad area (BA) diode lasers have been used for this experiments. The light output versus current (L-I) measurements were made on selected devices before and after the coatings. The devices were tested under pulsed operation with a pulse width of 400 ns and a duty cycle of 1:400. We have also carried out the theoretical analysis and simulation of L-I characteristics for this particular diode structure using LabVIEW. The experimental results were compared with simulated results. The effect of facet coating on external differential efficiency of diode laser has also been studied.

Paper Details

Date Published: 14 December 2005
PDF: 7 pages
Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 602805 (14 December 2005); doi: 10.1117/12.667119
Show Author Affiliations
C. J. Panchal, M. S. Univ. of Baroda (India)
V. A. Kheraj, M. S. Univ. of Baroda (India)
K. M. Patel, M. S. Univ. of Baroda (India)
P. K. Patel, M. S. Univ. of Baroda (India)
B. M. Arora, Tata Institute of Fundamental Research (India)
T. K. Sharma, Ctr. for Advanced Technology (India)

Published in SPIE Proceedings Vol. 6028:
ICO20: Lasers and Laser Technologies
Y. C. Chen; Dianyuan Fan; Chunqing Gao; Shouhuan Zhou, Editor(s)

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