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Proceedings Paper

Detectors of UV and x-ray irradiation on the base of metal-zinc selenide contact
Author(s): Victor P. Makhniy; Volodymyr V. Mel'nyk; Peter N. Gorley; Paul P. Horley; Mykhailo M. Sletov; Zhuang Zhuo
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Paper Abstract

The paper presents results of experimental investigations of electric and photoelectric properties of the diodes, obtained by thermal sputtering of semitransparent Ni layers over monocrystalline wafers of zinc selenide. It was found that parameters of diode structures studied are very similar to those of "ideal" metal-semiconductor contact. Influence of temperature, UV- and x-ray radiation on diode parameters is discussed.

Paper Details

Date Published: 9 December 2005
PDF: 7 pages
Proc. SPIE 6024, ICO20: Optical Devices and Instruments, 60242J (9 December 2005); doi: 10.1117/12.666966
Show Author Affiliations
Victor P. Makhniy, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Volodymyr V. Mel'nyk, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Peter N. Gorley, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Paul P. Horley, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Mykhailo M. Sletov, Yuri Fedkovych Chernivtsi National Univ. (Ukraine)
Zhuang Zhuo, Shanda Luneng Information Technology Co., Ltd. (China)
Coretech Crystal Co. (China)


Published in SPIE Proceedings Vol. 6024:
ICO20: Optical Devices and Instruments
James C. Wyant; X. J. Zhang, Editor(s)

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