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Proceedings Paper

Single-mode lasing from ZnO-SiO2 thin film nanoresonators obtained by magnetron sputtering method
Author(s): Alexander Gruzintsev; Gennadi Emelchenko; Carlos Barthou; Paul Benalloul; Vladimir Volkov
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Paper Abstract

Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on SiO2-Si and opal were carried out. The stimulated emission pumped under ultra violet 337 nm N2 laser excitation was observed at 397 nm at room temperature from ZnO-SiO2-Si type and ZnO-opal type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm2 for ZnO-SiO2-Si and 300 KW/cm2 for ZnO-opal structures.

Paper Details

Date Published: 18 April 2006
PDF: 9 pages
Proc. SPIE 6182, Photonic Crystal Materials and Devices III (i.e. V), 61822C (18 April 2006); doi: 10.1117/12.666650
Show Author Affiliations
Alexander Gruzintsev, Institute of Microelectronics Technology (Russia)
Gennadi Emelchenko, Institute of Solid State Physics (Russia)
Carlos Barthou, Institute des Nanoscience, CNRS, Univ. P. et M. Curie (France)
Paul Benalloul, Institute des Nanoscience, CNRS, Univ. P. et M. Curie (France)
Vladimir Volkov, Institute of Microelectronics Technology (Russia)

Published in SPIE Proceedings Vol. 6182:
Photonic Crystal Materials and Devices III (i.e. V)
Richard M. De La Rue; Pierre Viktorovitch; Ceferino Lopez; Michele Midrio, Editor(s)

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