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Proceedings Paper

Design of a RCE photodetectors based on the internal photoemission effect
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Paper Abstract

In this paper we present a general methodology for the design of resonant cavity enhanced (RCE) photodetectors based on the internal photoemission effect. In order to estimate the theoretical quantum efficiency we take advantage of the analytical formulation of the internal photoemission effect (Fowler theory), and its extension for thin films. In particular, the absorptance is numerically determined by means of an approach based on the transfer matrix method. Finally, we apply the proposed methodology to the design of a silicon RCE photodetector operating at 1.55μm, based on the internal photoemission effect at an Au-Si schottky barrier.

Paper Details

Date Published: 20 April 2006
PDF: 9 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831Y (20 April 2006); doi: 10.1117/12.666522
Show Author Affiliations
M. Casalino, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
L. Sirleto, Isituto per la Microelettronica e Microsistemi/CNR (Italy)
L. Moretti, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
S. Libertino, Isituto per la Microelettronica e Microsistemi/CNR (Italy)
I. Rendina, Isituto per la Microelettronica e Microsistemi/CNR (Italy)


Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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