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Proceedings Paper

High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz
Author(s): E. R. Brown; H. Kazemi; A. C. Young; J. D. Zimmerman; T. L. J. Wilkinson; J. E. Bjarnason; J. B. Hacker; A. C. Gossard
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Paper Abstract

We report experimental results for the optical responsivity and noise-equivalent power (NEP) of quasi-optically coupled, room-temperature ErAs-InGaAlAs rectifier diodes. Four-micron-diameter diodes were flip-chip coupled to self-complementary log-periodic and square-spiral antennas, and characterized with a 104-GHz Gunn diode oscillator coupled to the rectifiers through variable attenuators, a feedhorn, an aspherical polymeric lens, and a Si hyperhemisphere. The log-periodic mounted device displayed a responsivity and specific NEP' of 0.9x103 V/W and 1.2x10-12 W/Hz1/2, respectively. The square-spiral mounted device displayed a responsivity and NEP' of 1.2x103 V/W and 2.0x10-12 W/Hz 1/2, respectively. All values were measured at a post-detection center frequency of 33 Hz.

Paper Details

Date Published: 19 May 2006
PDF: 7 pages
Proc. SPIE 6212, Terahertz for Military and Security Applications IV, 62120S (19 May 2006); doi: 10.1117/12.666473
Show Author Affiliations
E. R. Brown, Univ. of California, Santa Barbara (United States)
H. Kazemi, Rockwell Scientific (United States)
A. C. Young, Univ. of California, Santa Barbara (United States)
J. D. Zimmerman, Univ. of California, Santa Barbara (United States)
T. L. J. Wilkinson, Univ. of California, Santa Barbara (United States)
J. E. Bjarnason, Univ. of California, Santa Barbara (United States)
J. B. Hacker, Rockwell Scientific (United States)
A. C. Gossard, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6212:
Terahertz for Military and Security Applications IV
Dwight L. Woolard; R. Jennifer Hwu; Mark J. Rosker; James O. Jensen, Editor(s)

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