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Proceedings Paper

Advances in high-brightness high-power semiconductor lasers
Author(s): R. M. Lammert; S. W. Oh; M. L. Osowski; C. Panja; P. T. Rudy; T. Stakelon; J. E. Ungar
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Paper Abstract

We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Paper Details

Date Published: 12 May 2006
PDF: 12 pages
Proc. SPIE 6216, Laser Source and System Technology for Defense and Security II, 62160B (12 May 2006); doi: 10.1117/12.666259
Show Author Affiliations
R. M. Lammert, Quintessence Photonics Corp. (United States)
S. W. Oh, Quintessence Photonics Corp. (United States)
M. L. Osowski, Quintessence Photonics Corp. (United States)
C. Panja, Quintessence Photonics Corp. (United States)
P. T. Rudy, Quintessence Photonics Corp. (United States)
T. Stakelon, Quintessence Photonics Corp. (United States)
J. E. Ungar, Quintessence Photonics Corp. (United States)


Published in SPIE Proceedings Vol. 6216:
Laser Source and System Technology for Defense and Security II
Gary L. Wood; Mark A. Dubinskii, Editor(s)

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