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Proceedings Paper

Characterization of InGaAsP/InP APD arrays for SWIR imaging applications
Author(s): Joseph Boisvert; Ping Yuan; Paul McDonald; Takahiro Isshiki; Andrey Masalykin; Rengarajan Sudharsanan
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Paper Abstract

32×32 element InGaAsP/InP avalanche photodiode arrays operating at 1.06 μm have been fabricated and characterized. Material characterization data on uniformity and layer quality have been correlated to array performance using the McIntyre model. Sheet resistivity maps, Hall mobility, dark current, capacitance and gain data are presented. These devices have showed gain as high as 75 with low dark current. Both device and materials uniformity characterization data will be presented.

Paper Details

Date Published: 19 May 2006
PDF: 8 pages
Proc. SPIE 6214, Laser Radar Technology and Applications XI, 62140H (19 May 2006); doi: 10.1117/12.666002
Show Author Affiliations
Joseph Boisvert, Spectrolab Inc., Boeing (United States)
Ping Yuan, Spectrolab Inc., Boeing (United States)
Paul McDonald, Spectrolab Inc., Boeing (United States)
Takahiro Isshiki, Spectrolab Inc., Boeing (United States)
Andrey Masalykin, Spectrolab Inc., Boeing (United States)
Rengarajan Sudharsanan, Spectrolab Inc., Boeing (United States)


Published in SPIE Proceedings Vol. 6214:
Laser Radar Technology and Applications XI
Gary W. Kamerman; Monte D. Turner, Editor(s)

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