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Proceedings Paper

An analysis of gamma radiation effects on ZnS- and CdTe-passivated HgCdTe photodiodes
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Paper Abstract

At present, infrared photodetectors are being increasingly used in space systems, where they are exposed to the space radiation environment. Consequently, the radiation-hardness-related problem in HgCdTe photodetectors has become a critical issue. In this study, the gamma radiation effects on ZnS- and CdTe-passivated mid-wavelength infrared (MWIR) HgCdTe photodiodes were investigated. Although ZnS has an excellent insulating property, its radiation-tolerant property was revealed very poor in comparison with CdTe. After 1 Mrad of gamma irradiation, the resistance-area product at zero bias (R0A) value of the ZnS-passivated photodiode was drastically reduced by roughly 5 orders from ~107 Ω cm2 to 102 Ω cm2, whereas the CdTe-passivated photodiode showed no degradation in R0A values.

Paper Details

Date Published: 18 May 2006
PDF: 8 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062J (18 May 2006); doi: 10.1117/12.665500
Show Author Affiliations
Min Yung Lee, Korea Advanced Institute of Science and Technology (South Korea)
Young Ho Kim, i3system, Co. (South Korea)
Nam Ho Lee, Korea Atomic Energy Research Institute (South Korea)
Yong Soo Lee, Korea Advanced Institute of Science and Technology (South Korea)
Siva Sivananthan, Univ. of Illinois at Chicago (United States)
Hee Chul Lee, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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