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Proceedings Paper

Modeling and experimental results of low-background extrinsic double-injection IR detector response
Author(s): N. B. Zaletaev; A. M. Filachev; V. P. Ponomarenko; V. I. Stafeev
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Paper Abstract

Bias-dependent response of an extrinsic double-injection IR detector under irradiation from extrinsic and intrinsic responsivity spectral ranges was obtained analytically and through numerical modeling. The model includes the transient response and generation-recombination noise as well. It is shown that a great increase in current responsivity (by orders of magnitude) without essential change in detectivity can take place in the range of extrinsic responsivity for detectors on semiconductor materials with long-lifetime minority charge carriers if double-injection photodiodes are made on them instead photoconductive detectors. Field dependence of the lifetimes and mobilities of charge carriers essentially influences detector characteristics especially in the voltage range where the drift length of majority carriers is greater than the distance between the contacts. The model developed is in good agreement with experimental data obtained for n-Si:Cd, p-Ge:Au, and Ge:Hg diodes, as well as for diamond detectors of radiations. A BLIP-detection responsivity of about 2000 A/W (for a wavelength of 10 micrometers) for Ge:Hg diodes has been reached in a frequency range of 500 Hz under a background of 6 x 1011 cm-2s-1 at a temperature of 20 K. Possibilities of optimization of detector performance are discussed. Extrinsic double-injection photodiodes and other detectors of radiations with internal gain based on double injection are reasonable to use in the systems liable to strong disturbance action, in particular to vibrations, because high responsivity can ensure higher resistance to interference.

Paper Details

Date Published: 17 April 2006
PDF: 11 pages
Proc. SPIE 6206, Infrared Technology and Applications XXXII, 620633 (17 April 2006); doi: 10.1117/12.665231
Show Author Affiliations
N. B. Zaletaev, Orion Research, Development, and Production Association (Russia)
A. M. Filachev, Orion Research, Development, and Production Association (Russia)
V. P. Ponomarenko, Orion Research, Development, and Production Association (Russia)
V. I. Stafeev, Orion Research, Development, and Production Association (Russia)

Published in SPIE Proceedings Vol. 6206:
Infrared Technology and Applications XXXII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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