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Proceedings Paper

Light-emitting organic field-effect transistors using an organic heterostructure inside the transistor channel
Author(s): Stijn De Vusser; Soeren Steudel; Sarah Schols; Stijn Verlaak; Jan Genoe; Wibren D. Oosterbaan; Laurence J. Lutsen; Dirk J. M. Vanderzande; Paul L. Heremans
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Paper Abstract

We have realized a light-emitting organic field-effect transistor (LEOFET). Excitons are generated at the interface of an n-type and a p-type organic semiconductor heterostructure inside the transistor channel. The dimensions and the position of the p-n heterostructure are defined by photolithography. The recombination region is several microns from the metal electrodes. Therefore, the exciton quenching probability in this device is reduced. Numerical simulations show that the recombination region can move within the transistor channel by changing the biasing conditions.

Paper Details

Date Published: 20 April 2006
PDF: 10 pages
Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61920J (20 April 2006); doi: 10.1117/12.664399
Show Author Affiliations
Stijn De Vusser, IMEC-MCP/PME (Belgium)
Katholieke Univ. Leuven (Belgium)
Soeren Steudel, IMEC-MCP/PME (Belgium)
Katholieke Univ. Leuven (Belgium)
Sarah Schols, IMEC-MCP/PME (Belgium)
Katholieke Univ. Leuven (Belgium)
Stijn Verlaak, IMEC-MCP/PME (Belgium)
Jan Genoe, IMEC-MCP/PME (Belgium)
Wibren D. Oosterbaan, IMEC-IMOMEC (Belgium)
Laurence J. Lutsen, IMEC-IMOMEC (Belgium)
Dirk J. M. Vanderzande, IMEC-IMOMEC (Belgium)
Hasselt Univ., IMO (Belgium)
Paul L. Heremans, IMEC-MCP/PME (Belgium)
Katholieke Univ. Leuven (Belgium)


Published in SPIE Proceedings Vol. 6192:
Organic Optoelectronics and Photonics II
Paul L. Heremans; Michele Muccini; Eric A. Meulenkamp, Editor(s)

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