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Proceedings Paper

Dependence of luminous efficiency of OLEDS doped rare earth ions on applied voltage
Author(s): J. Liu; Xi M. Chen; Y. Liu; Chang K. Duan
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Paper Abstract

In this paper, a disorder hopping model was improved from analysis of the quantum size effect and interface effect of organic diodes doped with rare earth ions. The microscopic mechanism associated with the applied voltage influences on the recombination efficiency and the luminous efficiency of rare earth ions-doped OLEDs was investigated. The dependence of recombination efficiency and luminous efficiency on applied voltage varies with rare earth ions such as Nd, Eu and Er. Recombination efficiency, and then luminous efficiency increases first, and then reaches a maximum at a certain applied voltage. Then it decreases slowly. Maximum recombination efficiency, and then maximum luminous efficiency vary with rare earth ions. The corresponding voltage varies with rare earth ions also. The relation between recombination efficency and luminous efficency was studied. The results of this study agree closely with other studies cited herein.

Paper Details

Date Published: 21 March 2006
PDF: 5 pages
Proc. SPIE 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials, 60402E (21 March 2006); doi: 10.1117/12.664262
Show Author Affiliations
J. Liu, Chongqing Univ. of Posts and Telecommunications (China)
Chongqing Univ. (China)
Xi M. Chen, Chongqing Univ. of Posts and Telecommunications (China)
Y. Liu, Chongqing Univ. of Posts and Telecommunications (China)
Chongqing Univ. (China)
Chang K. Duan, Chongqing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6040:
ICMIT 2005: Mechatronics, MEMS, and Smart Materials

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