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Proceedings Paper

Nano hardness measurements of single crystal silica (Si) by an easy new technique
Author(s): Shahjada Ahmed Pahlovy; Sadao Momota; Yao Ying Xue
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Paper Abstract

Nano-Hardness is commonly defined as a materials resistance to permanent or plastic deformation at the nano-micro level. Nano Hardness is a significant mechanical properties of materials commonly used to characterize the wear resistance of materials. In this present paper, a procedure is developed for calculation of nano hardness by use of nano indentation and an Atomic Force Microscope (A.F.M). For the indentation experiment a three sided pyramidal diamond tip has been used. Experiment have been concluded on single crystal Silica ( Si ) . At room temperature nano hardness properties of single crystal Si have been investigated at dissimilar indentation loads. Inorder to obtain the nanoindentation hardness of single crystal Silica , the load displacement data have been used. After the indentation, the indentational images were observed by AFM. The images were triangle shape and the sides of triangle were measured by AFM for area calculation. Comparison of the data obtained using nano indenter with that obtained by using new technique was shown. It has been concluded from the results that the measured nano hardness values of the material sensitively depend on the applied load of indentation and surface roughness. It is also concluded that the calculated nano hardness is smaller than nano indenter hardness which indicates the calculated area is bigger than indentational area.

Paper Details

Date Published: 21 March 2006
PDF: 6 pages
Proc. SPIE 6040, ICMIT 2005: Mechatronics, MEMS, and Smart Materials, 60401J (21 March 2006); doi: 10.1117/12.664225
Show Author Affiliations
Shahjada Ahmed Pahlovy, Kochi Univ. of Technology (Japan)
Sadao Momota, Kochi Univ. of Technology (Japan)
Yao Ying Xue, Kochi Univ. of Technology (Japan)

Published in SPIE Proceedings Vol. 6040:
ICMIT 2005: Mechatronics, MEMS, and Smart Materials
Yunlong Wei; Kil To Chong; Takayuki Takahashi; Shengping Liu; Zushu Li; Zhongwei Jiang; Jin Young Choi, Editor(s)

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