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Proceedings Paper

Interferometric measurement of thickness of silicon nitride layer in bi-morph silicon MEMS
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Paper Abstract

In this paper is reported a method for measuring the thickness of a silicone nitride layers employed for fabricating silicon MEMS bi-morph structures. The method allows the precise evaluation of layer thickness by adopting Digital Holographic Microscope. The measurement is based on the fact that the silicon nitride layer is transparent to the visible light. The optical phase difference (OPD) between the light beam traveling through the layer and portion of the beam in air is measured exploiting an interferometric technique. The approach is very simple and can be utilized even for inspection of non-planar or stressed structures. Experimental values have been compared with ellipsometric measurements.

Paper Details

Date Published: 28 April 2006
PDF: 8 pages
Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61880R (28 April 2006); doi: 10.1117/12.664096
Show Author Affiliations
P. Ferraro, Istituto Nazionale di Ottica Applicata, CNR (Italy)
LENS-European Lab. for Nonlinear Spectroscopy (Italy)
M. Paturzo, Istituto Nazionale di Ottica Applicata, CNR (Italy)
LENS-European Lab. for Nonlinear Spectroscopy (Italy)
S. De Nicola, Istituto di Cibernetica, CNR (Italy)
A. Finizio, Istituto di Cibernetica, CNR (Italy)
G. Pierattini, Istituto di Cibernetica, CNR (Italy)
G. Coppola, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
M. Iodice, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
V. Striano, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
M. Gagliardi, Istituto per la Microelettronica e Microsistemi, CNR (Italy)


Published in SPIE Proceedings Vol. 6188:
Optical Micro- and Nanometrology in Microsystems Technology
Christophe Gorecki; Anand K. Asundi; Wolfgang Osten, Editor(s)

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