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Proceedings Paper

MCT infrared photodiodes on the basis of graded gap Р-р heterojunction grown by MBE HgCdTe epilayers on GaAs
Author(s): V. V. Vasiliev; V. G. Remesnik D.D.S.; S. A. Dvoretsky; V. S. Varavin; N. N. Mikhailov; Yu. G. Sidorov; A. O. Suslyakov; A. L. Aseev
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Paper Abstract

The measurement signal (S) to noise (N) ratio (S/N) of novel 128×128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 μm was fabricated by B+ implantation process into graded MCT P-p heterojunction with potential barrier. MCT P-p heterojunction with specific MCT composition throughout the thickness was grown by MBE on GaAs substrate by ellipsometric control in situ. The potential barrier was determined by the difference of MCT composition at absorber and p-n junction location layers and equal to ΔXCdTe = 0,025. It was shown that based on P-p heterojunction FPA operated temperature and wavelength increases over routine one without P-p heterojunction. Keywords: graded gap layers, heterojunction, MCT, photodiodes, FPA.

Paper Details

Date Published: 22 April 2006
PDF: 5 pages
Proc. SPIE 6189, Optical Sensing II, 61892A (22 April 2006); doi: 10.1117/12.663506
Show Author Affiliations
V. V. Vasiliev, Institute of Semiconductor Physics (Russia)
V. G. Remesnik D.D.S., Institute of Semiconductor Physics (Russia)
S. A. Dvoretsky, Institute of Semiconductor Physics (Russia)
V. S. Varavin, Institute of Semiconductor Physics (Russia)
N. N. Mikhailov, Institute of Semiconductor Physics (Russia)
Yu. G. Sidorov, Institute of Semiconductor Physics (Russia)
A. O. Suslyakov, Institute of Semiconductor Physics (Russia)
A. L. Aseev, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 6189:
Optical Sensing II
Brian Culshaw; Anna G. Mignani; Hartmut Bartelt; Leszek R. Jaroszewicz, Editor(s)

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