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Proceedings Paper

Thermal characterization of power transistors by close-infrared thermography method
Author(s): S. Dhokkar; B. Serio; J. J. Hunsinger; P. Lagonotte
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Paper Abstract

In this work, the thermal characterization of a power MOSFET (Metal-Oxide-Silicon-Field-Effect-Transistor) using near infrared thermography method is presented. This characterization is based on the measurement of thermal radiation emitted by power transistor in the spectral domain ranging from 800 nm to 1000 nm. The thermal measurement is obtained in steady and dynamic mode and the absolute temperature distribution is measured at the micron scale. In dynamic mode, the transistor is heated (by Joule effect) at a frequency compatible with the camera acquisition speed. Results obtained in both modes highlight the excellent spatial resolution (optical resolution) of the experimental measurement apparatus and its great sensitivity for detection of weak thermal emission variations.

Paper Details

Date Published: 28 April 2006
PDF: 10 pages
Proc. SPIE 6188, Optical Micro- and Nanometrology in Microsystems Technology, 61881E (28 April 2006); doi: 10.1117/12.663500
Show Author Affiliations
S. Dhokkar, Lab. d’Etudes Thermiques, CNRS, Ecole Nationale Supérieure de Mécanique et d'Aérot (France)
B. Serio, Ecole Nationale Supérieure de Physique de Strasbourg (France)
J. J. Hunsinger, FEMTO-ST, CNRS, UMR 6174 (France)
P. Lagonotte, Lab. d’Etudes Thermiques, CNRS, Ecole Nationale Supérieure de Mécanique et d'Aérot (France)


Published in SPIE Proceedings Vol. 6188:
Optical Micro- and Nanometrology in Microsystems Technology
Christophe Gorecki; Anand K. Asundi; Wolfgang Osten, Editor(s)

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