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Proceedings Paper

Raman approach for study of amplification in porous silicon at 1.5μm
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Paper Abstract

In the last years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved great results. However, some significant limitations, inherent to the physics of silicon, have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. On this line of argument, an approach based on Raman scattering in porous silicon is presented. We prove two significant advantage with respect to silicon: the broadening of spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.

Paper Details

Date Published: 20 April 2006
PDF: 8 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831U (20 April 2006); doi: 10.1117/12.663432
Show Author Affiliations
M. A. Ferrara, Istituto per la Microelettronica e Microsistemi/CNR (Italy)
DIMET - Univ. Mediterranea (Italy)
L. Sirleto, Istituto per la Microelettronica e Microsistemi/CNR (Italy)
B. Jalali, Univ. of California/Los Angeles (United States)
I. Rendina, Istituto per la Microelettronica e Microsistemi/CNR (Italy)


Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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