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Proceedings Paper

Coherent transport of hole and Coulomb blockade phenomenon in long p-type semiconductor carbon nanotube
Author(s): Takafumi Kamimura; Kazuhiko Matsumoto
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Paper Abstract

We have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of the hole in a single-walled carbon nanotube (SWNT) with a length of 4.5 μm at 8.6 K. SWNT channel field-effect transistor (FET) structures were prepared with two different channel lengths of 4.5 and 1.4 μm. The samples showed p-type semiconductor characteristics under large gate and drain biases at 8.6 K. At 8.6 K, on the other hand, single-hole transistor characteristics with different Coulomb charging energies corresponding to the length of the channel were observed in each sample. Drain current peaks with different periods corresponding to the length of the channel were also observed outside of the Coulomb blockade area for the higher drain voltages in each sample. The drain current peaks are attributed to resonant tunneling of the hole through the separation of the quantum energy levels originating from coherent transport of the hole in the entire semiconductive SWNT.

Paper Details

Date Published: 28 February 2006
PDF: 12 pages
Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 612714 (28 February 2006); doi: 10.1117/12.663344
Show Author Affiliations
Takafumi Kamimura, Osaka Univ. (Japan)
CREST, Japan Science and Technology Agency (Japan)
Kazuhiko Matsumoto, Osaka Univ. (Japan)
CREST, Japan Science and Technology Agency (Japan)
National Institute of Advanced Industrial Science and Technology (Japan)


Published in SPIE Proceedings Vol. 6127:
Quantum Sensing and Nanophotonic Devices III
Manijeh Razeghi; Gail J. Brown, Editor(s)

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