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Proceedings Paper

Photo-induced phenomena in organic field-effect phototransistors based on conjugated polymer/fullerene blends and organic dielectric
Author(s): N. Marjanović; Th. B. Singh; G. Dennler; S. Günes; R. Koeppe; H. Neugebauer; N. S. Sariciftci; S. Bauer
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Paper Abstract

Photo-induced phenomena were investigated in photoresposive organic field-effect transistors (photOFETs) based on conjugated polymer/fullerene solid-state mixtures as active semiconductor layer and divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) as gate dielectrics. The devices were characterized both in under dark showing n-type transistor behaviour with linear and saturated mobility of 1.7 x 10-3 cm2/Vs and 2.7 x 10-2 cm2/Vs respectively, and under white light illumination condition, where large shifts in the threshold voltage in the transfer characteristics were obtained. A typical phototransistor behaviour in a wide range of illumination intensities are observed in these devices.

Paper Details

Date Published: 20 April 2006
PDF: 10 pages
Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61921D (20 April 2006); doi: 10.1117/12.663042
Show Author Affiliations
N. Marjanović, Johannes Kepler Univ. Linz (Austria)
Th. B. Singh, Johannes Kepler Univ. Linz (Austria)
G. Dennler, Johannes Kepler Univ. Linz (Austria)
S. Günes, Johannes Kepler Univ. Linz (Austria)
R. Koeppe, Johannes Kepler Univ. Linz (Austria)
H. Neugebauer, Johannes Kepler Univ. Linz (Austria)
N. S. Sariciftci, Johannes Kepler Univ. Linz (Austria)
S. Bauer, Johannes Kepler Univ. Linz (Austria)


Published in SPIE Proceedings Vol. 6192:
Organic Optoelectronics and Photonics II
Paul L. Heremans; Michele Muccini; Eric A. Meulenkamp, Editor(s)

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