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Proceedings Paper

Reduced risk of catastrophic optical mirror damage in high power tapered lasers using intracavity diverging lens
Author(s): Chyng Wen Tee; Fat Kit Lau; Xin Zhao; Richard Penty; Ian White; Michel Calligaro; Michel Lecomte; Olivier Parillaud; Nicolas Michel; Michel Krakowski
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Paper Abstract

This paper approaches the problem of catastrophic optical mirror damage from a geometrical waveguide point of view. Instead of engineering the characteristics of the semiconductor material at the facet of the laser using quantum-well intermixing or other sophisticated wafer growth technique, a simple intra-cavity diverging lens concept is proposed and demonstrated to be capable of effectively expanding the lateral optical mode in order to counter the effect of SHB and thermal lensing effect, thereby reducing the risk of COMD. The Gaussian output beam profile is maintained throughout the whole of the current range tested, showing that expanding the nearfield at facet using integrated lens does not compromise the brightness of the laser. A key finding in this work is that the diverging effect on an optical mode is a thoroughly scalable effect that can be engineered by varying the etch-depth of the integrated lens. Fabrication of the lens is compatible with existing laser manufacturing process flow in that it can be easily implemented either by post-processing technology or by an additional lithographical step. This opens up new possibility in device design, with the beam width along the lateral direction being a parameter that can be optimized in isolation.

Paper Details

Date Published: 14 April 2006
PDF: 8 pages
Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840P (14 April 2006); doi: 10.1117/12.662653
Show Author Affiliations
Chyng Wen Tee, Univ. of Cambridge (United Kingdom)
Fat Kit Lau, Univ. of Cambridge (United Kingdom)
Xin Zhao, Univ. of Cambridge (United Kingdom)
Richard Penty, Univ. of Cambridge (United Kingdom)
Ian White, Univ. of Cambridge (United Kingdom)
Michel Calligaro, Alcatel-Thales III-V Lab. (France)
Michel Lecomte, Alcatel-Thales III-V Lab. (France)
Olivier Parillaud, Alcatel-Thales III-V Lab. (France)
Nicolas Michel, Alcatel-Thales III-V Lab. (France)
Michel Krakowski, Alcatel-Thales III-V Lab. (France)


Published in SPIE Proceedings Vol. 6184:
Semiconductor Lasers and Laser Dynamics II
Daan Lenstra; Markus Pessa; Ian H. White, Editor(s)

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