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Proceedings Paper

Patterning light emitting porous silicon using helium beam irradiation
Author(s): E. J. Teo; M. B. H. Breese; A. A. Bettiol; F. Champeaux; D. J. Blackwood
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Paper Abstract

High energy helium beam has been utilized to pattern silicon prior to electrochemical etching in hydrofluoric acid. Photoluminescence (PL) studies carried out on medium resistivity silicon showed that the PL wavelength of the irradiated regions is continuously red-shifted by up to 150 nm with increasing dose. On the lower resistivity silicon, the intensity is shown to increase by more than twenty times with dose. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used to determine the surface morphology of the irradiated structure. This technique is potentially important for producing an integrated silicon based optoelectronic device.

Paper Details

Date Published: 20 April 2006
PDF: 8 pages
Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 618312 (20 April 2006); doi: 10.1117/12.662502
Show Author Affiliations
E. J. Teo, National Univ. of Singapore (Singapore)
M. B. H. Breese, National Univ. of Singapore (Singapore)
A. A. Bettiol, National Univ. of Singapore (Singapore)
F. Champeaux, National Univ. of Singapore (Singapore)
D. J. Blackwood, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 6183:
Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits
Giancarlo C. Righini, Editor(s)

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