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Proceedings Paper

Seebeck infrared photodetectors: an ultra wide dynamic range of design possibilities
Author(s): Johan Stiens; Gennady Shkerdin; Vladimir Kotov; Werner Vandermeiren; Cathleen De Tandt; Gustaaf Borghs; Roger Vounckx
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Paper Abstract

The theoretical background of Seebeck infrared detectors based on nonlinear free carrier absorption in doped semiconductors has been presented. The 3D-distribution of the electron and lattice temperatures created by the absorption of an optical beam with a cylindrical symmetry in layered structures was developed. Five different operation regimes of the detector are presented, showing that all beams form CW down to picoseconds can be detected. We will discuss how one can control the detectable power and intensity levels and the cross-talk in multi-pixel arrays by means of the doping concentration, geometry of the absorption region and pixellation format, the positioning of a heat sink, and micro-machining techniques. Experimental backing for the model will be given for the pulsed regime and the CW regime. We also demonstrate operation of the detector in the +1 kW power level.

Paper Details

Date Published: 22 April 2006
PDF: 12 pages
Proc. SPIE 6189, Optical Sensing II, 61890Y (22 April 2006); doi: 10.1117/12.662483
Show Author Affiliations
Johan Stiens, Vrije Univ. Brussel (Belgium)
Gennady Shkerdin, Institute of Radio Engineering and Electronics (Russia)
Vladimir Kotov, Institute of Radio Engineering and Electronics (Russia)
Werner Vandermeiren, Vrije Univ. Brussel (Belgium)
Cathleen De Tandt, Vrije Univ. Brussel (Belgium)
Gustaaf Borghs, IMEC (Belgium)
Roger Vounckx, Vrije Univ. Brussel (Belgium)


Published in SPIE Proceedings Vol. 6189:
Optical Sensing II
Brian Culshaw; Anna G. Mignani; Hartmut Bartelt; Leszek R. Jaroszewicz, Editor(s)

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