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Proceedings Paper

Study of vertical type organic light emitting transistor using ZnO
Author(s): Hiroyuki Iechi; Yasuyuki Watanabe; Kazuhiro Kudo
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Paper Abstract

We propose a new type organic light emitting transistor (OLET) combining static induction transistor (SIT) with double hetero junction type organic light emitting diodes (OLED) using n-type zinc oxide (ZnO) films which works as a transparent and electron injection layer. The device characteristics of newly developed OLED and ZnO-SIT showed relatively high luminance of about 500 cd/m2 at 7.6 mA/cm2 and is able to control by gate voltage as low as a few volts, respectively. The crystal structures of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the thin film transistor (TFT) and SIT depending on the ZnO sputtering conditions are investigated. The results obtained here show that the OLET using ZnO film is a suitable element for flexible sheet displays.

Paper Details

Date Published: 20 April 2006
PDF: 7 pages
Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61920K (20 April 2006); doi: 10.1117/12.662381
Show Author Affiliations
Hiroyuki Iechi, Ricoh Co., Ltd. (Japan)
Optoelectronic Industry and Technology Development Association (Japan)
Yasuyuki Watanabe, Optoelectronic Industry and Technology Development Association (Japan)
Kazuhiro Kudo, Optoelectronic Industry and Technology Development Association (Japan)
Chiba Univ. (Japan)


Published in SPIE Proceedings Vol. 6192:
Organic Optoelectronics and Photonics II
Paul L. Heremans; Michele Muccini; Eric A. Meulenkamp, Editor(s)

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