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Proceedings Paper

The influences of thickness on piezoresistive properties of poly-Si nanofilms
Author(s): Xiaowei Liu; Rongyan Chuai; Minghao Song; Huiyan Pan; Xiaowei Xu
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Paper Abstract

Experiments show that the gauge factor of poly-Si film is biggish when its thickness is in the range of nano scale, which cannot be explained reasonably by existing piezoresistive theories. This paper focuses on how gauge factor varies with film thickness, analyzes the origin of poly-Si piezoresistive properties under the circumstance of small grain size, and indicates that tunneling current going through grain boundary barrier is influenced by the strain, which makes the enhancement of piezoresistive effect at gain boundary. Based on these, a modified model on poly-Si piezoresistive properties is proposed, and it fits the experimental results well.

Paper Details

Date Published: 21 April 2006
PDF: 9 pages
Proc. SPIE 6186, MEMS, MOEMS, and Micromachining II, 61860V (21 April 2006); doi: 10.1117/12.662348
Show Author Affiliations
Xiaowei Liu, Harbin Institute of Technology (China)
Rongyan Chuai, Harbin Institute of Technology (China)
Shenyang Univ. of Technology (China)
Minghao Song, Harbin Institute of Technology (China)
Huiyan Pan, Harbin Institute of Technology (China)
Xiaowei Xu, Harbin Institute of Technology (China)


Published in SPIE Proceedings Vol. 6186:
MEMS, MOEMS, and Micromachining II
Hakan Ürey; Ayman El-Fatatry, Editor(s)

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