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Proceedings Paper

InN as THz emitter excited at 1060 nm and 800 nm
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Paper Abstract

InN, a novel semiconductor material, is used as THz surface emitter. The material is irradiated with fs-laser pulses at 1060 nm and 800 nm and the emitted ultrashort THz pulses are measured by phase sensitive detection. Pulsforms, amplitudes and spectra are compared to the THz emission of p-doped InAs, the standard material for THz surface emission.

Paper Details

Date Published: 19 April 2006
PDF: 9 pages
Proc. SPIE 6194, Millimeter-Wave and Terahertz Photonics, 61940I (19 April 2006); doi: 10.1117/12.662301
Show Author Affiliations
Boris Pradarutti, Fraunhofer IOF (Germany)
Gabor Matthäus, Institute of Applied Physics (Germany)
Claudia Brückner, Fraunhofer IOF (Germany)
Stefan Riehemann, Fraunhofer IOF (Germany)
Gunther Notni, Fraunhofer IOF (Germany)
Stefan Nolte, Institute of Applied Physics (Germany)
Volker Cimalla, Institute of Micro- and Nanotechnologies (Germany)
Vadim Lebedev, Institute of Micro- and Nanotechnologies (Germany)
Oliver Ambacher, Institute of Micro- and Nanotechnologies (Germany)
Andreas Tünnermann, Fraunhofer IOF (Germany)
Institute of Applied Physics (Germany)

Published in SPIE Proceedings Vol. 6194:
Millimeter-Wave and Terahertz Photonics
Dieter Jäger; Andreas Stöhr, Editor(s)

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