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Proceedings Paper

THz semiconductor hot electron bolometer (SHEB)
Author(s): V. N. Dobrovolsky; F. F. Sizov
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Paper Abstract

Moderately cooled, fast and diffraction-limited THz bolometer is proposed and its theoretical model is developed. Unlike thermal bolometers, the radiation rapidly heats only electrons in narrow gap bipolar semiconductor without the semiconductor lattice inertial heating. In conditions determined this heating changes generation and recombination processes, that leads to the carrier concentration decrease and semiconductor resistance rise. This rise creates the device output signal. According to this model the SHEB on base of narrow gap mercury cadmium telluride (MCT) semiconductor at temperature of T = 78 K can have detectivity D* ~ (0.3-2)107 cmHz1/2/W in the range of (0.01-1.5) THz.

Paper Details

Date Published: 19 April 2006
PDF: 6 pages
Proc. SPIE 6194, Millimeter-Wave and Terahertz Photonics, 61940O (19 April 2006); doi: 10.1117/12.662265
Show Author Affiliations
V. N. Dobrovolsky, V. Lashkariov Institute of Semiconductor Physics (Ukraine)
F. F. Sizov, V. Lashkariov Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 6194:
Millimeter-Wave and Terahertz Photonics
Dieter Jäger; Andreas Stöhr, Editor(s)

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